Damascene process for forming coplanar top surface of copper con

Details Damascene process for forming coplanar top surface of copper con Damascene process for forming coplanar top surface of copper con

1999-04-19

2000-10-31

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438653, H01L 2144

Patent

active

061402370

ABSTRACT:
A structure and method for making copper interconnections in an integrated circuit are described. The structure is a damascene copper connector whose upper surface is coplanar with the upper surface of the insulating layer in which it is embedded. Out-diffusion of copper from the connector is prevented by two barrier layers. One is located at the interface between the connector and the insulating layer while the second barrier is an insulating layer which covers the upper surface of the connector. The damascene process involves filling a trench in the surface of the insulator with copper and then removing the excess by chem.-mech. polishing. Since photoresist is never in direct contact with the copper the problem of copper oxidation during resist ashing has been effectively eliminated.

REFERENCES:
patent: 4910169 (1990-03-01), Hoshino
patent: 4931410 (1990-06-01), Tokunaga et al.
patent: 5084412 (1992-01-01), Nakasaki
patent: 5447599 (1995-09-01), Li et al.
patent: 5447887 (1995-09-01), Filipiak et al.
patent: 5612254 (1997-03-01), Mu et al.
patent: 5904565 (1999-05-01), Nguyen et al.
patent: 6066560 (2000-05-01), Yakura
patent: 6071813 (2000-06-01), Nogami
patent: 6080655 (2000-06-01), Givens et al.
patent: 6083822 (2000-07-01), Lee

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