Damascene method employing composite etch stop layer

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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Details

C257S751000, C257S758000, C257S762000

Reexamination Certificate

active

10760905

ABSTRACT:
A damascene structure is provided comprising a substrate, a lower intermetal dielectric layer over the substrate, an exposed conductive structure within the lower intermetal dielectric layer, a composite etch stop layer over the lower intermetal dielectric layer and the exposed conductive structure; the composite etch stop layer comprising a first lower sub-layer and a second upper sub-layer, an upper intermetal dielectric layer over the composite etch stop layer, a trench interconnection opening forming within the upper intermetal dielectric layer and the composite etch stop layer, the trench interconnection opening exposing the conductive structure, a barrier metal layer at least lining the trench interconnection opening. and a conductor plug within the trench interconnection opening, contacting the conductive structure. The upper surface of the barrier metal layer is coplanar with the upper surface of the conductor plug.

REFERENCES:
patent: 5380679 (1995-01-01), Kano
patent: 5451543 (1995-09-01), Woo et al.
patent: 5818110 (1998-10-01), Cronin
patent: 6069069 (2000-05-01), Chooi et al.
patent: 6107188 (2000-08-01), Liu et al.
patent: 6124198 (2000-09-01), Moslehi
patent: 6136682 (2000-10-01), Hegde et al.
patent: 6156640 (2000-12-01), Tsai et al.
patent: 6174810 (2001-01-01), Islam et al.
patent: 6255233 (2001-07-01), Smith et al.
patent: 6326301 (2001-12-01), Venkatesan et al.
patent: 6331479 (2001-12-01), Li et al.
patent: 6424021 (2002-07-01), Liu et al.
patent: 6436819 (2002-08-01), Zhang et al.
patent: 6440838 (2002-08-01), Lui et al.
patent: 6734116 (2004-05-01), Guo et al.
patent: 6753260 (2004-06-01), Li et al.

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