Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2007-03-06
2007-03-06
Lebentritt, Michael (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S751000, C257S758000, C257S762000
Reexamination Certificate
active
10760905
ABSTRACT:
A damascene structure is provided comprising a substrate, a lower intermetal dielectric layer over the substrate, an exposed conductive structure within the lower intermetal dielectric layer, a composite etch stop layer over the lower intermetal dielectric layer and the exposed conductive structure; the composite etch stop layer comprising a first lower sub-layer and a second upper sub-layer, an upper intermetal dielectric layer over the composite etch stop layer, a trench interconnection opening forming within the upper intermetal dielectric layer and the composite etch stop layer, the trench interconnection opening exposing the conductive structure, a barrier metal layer at least lining the trench interconnection opening. and a conductor plug within the trench interconnection opening, contacting the conductive structure. The upper surface of the barrier metal layer is coplanar with the upper surface of the conductor plug.
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Jang Syun-Ming
Liu Chung-Shi
Yu Chen-Hua
Haynes and Boone LLP
Lebentritt Michael
Roman Angel
Taiwan Semiconductor Manufacturing Company , Ltd.
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