Damascene method capable of avoiding copper extrusion

Details Damascene method capable of avoiding copper extrusion Damascene method capable of avoiding copper extrusion

2006-05-02

2006-05-02

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000, C438S700000

Reexamination Certificate

active

07037825

ABSTRACT:
A method for avoiding copper extrusion during a damascene process is disclosed. A semiconductor wafer including a substrate with at least one copper conductive wire on the substrate is provided. A dielectric layer on the copper conductive wire is formed. A damascene structure having an opening exposing a portion of the copper conductive wire is formed using the dielectric layer. A degassing process to make gas escape from the dielectric layer is performed. A barrier layer on portions of the exposed surface of the copper conductive wire and the damascene structure of the dielectric layer is formed. A conductive layer on the barrier layer is formed.

REFERENCES:
patent: 6368967 (2002-04-01), Besser
patent: 6486059 (2002-11-01), Lee et al.
patent: 6551915 (2003-04-01), Lin et al.
patent: 6764940 (2004-07-01), Rozbicki et al.
patent: 2005/0054202 (2005-03-01), Pan et al.

Affiliated with

Also associated with

Rating

Damascene method capable of avoiding copper extrusion does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Damascene method capable of avoiding copper extrusion, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Damascene method capable of avoiding copper extrusion will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3638445