Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2005-04-12
2005-04-12
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S781000, C257S784000, C257S459000, C257S750000, C257S758000, C257S773000, C257S774000, C257S748000
Reexamination Certificate
active
06879049
ABSTRACT:
A semiconductor device includes an insulating film. On this insulating film, are formed an interconnection trench communicating with a semiconductor element and a pad trench communicating with the interconnection trench. In the pad trench, a protrusion is formed by leaving one part of the insulating film. A conductive film is formed over the insulating film including the interconnection and pad trenches. Thereafter, the conductive film is removed by a CMP process. At this time, the protrusion serves to prevent the conductive film in the pad trench from being over-polished.
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Kumamoto Nobuhisa
Matsumoto Muneyuki
Yamamoto Koji
Bodner Gerald T.
Lee Eugene
Rohm & Co., Ltd.
Thomas Tom
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