Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-11-11
2011-10-18
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S413000, C438S592000
Reexamination Certificate
active
08039908
ABSTRACT:
The present invention relates generally to semiconductor devices and, more specifically, to damascene gates having protected shorting regions and related methods for their manufacture. A first aspect of the invention provides a method of forming a damascene gate with protected shorting regions, the method comprising: forming a damascene gate having: a gate dielectric atop a substrate; a gate conductor atop the gate dielectric; a conductive liner laterally adjacent the gate conductor; a spacer between the conductive liner and the substrate; and a first dielectric atop the gate conductor; removing a portion of the conductive liner; and depositing a second dielectric atop a remaining portion of the conductive liner, such that the second dielectric is laterally adjacent both the first dielectric and the gate.
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Anderson Brent A.
Nowak Edward J.
Rankin Jed H.
Booth Richard A.
Hoffman Warnick LLC
International Business Machines - Corporation
Kotulak Richard
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