Damascene contact structure for integrated circuits

Details Damascene contact structure for integrated circuits Damascene contact structure for integrated circuits

2011-03-08

2011-03-08

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S675000, C257SE21577

Reexamination Certificate

active

07902066

ABSTRACT:
Interconnects for integrated circuits, such as damascene structures are formed using a hard mask. The hard mask is formed from, for example, high-k dielectric material such as hafnium oxide or other materials having high etch selectivity to the interconnect dielectric material. This enables a thin mask to etch vias and trenches in the interconnect dielectric layer, avoiding the problems associated with the use of thick mask layers, such as contact hole striations and small depth of focus, which can result in shorts or opens.

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