Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-01-22
1998-12-01
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257384, 257754, 257755, 257757, H01L 2976, H01L 2994, H01L 2348, H01L 2352
Patent
active
058442847
ABSTRACT:
A semiconductor cell with a buried contact uses highly selective etching techniques in combination with a thin oxide etching stop to prevent damage to the buried contact during the etching process. A cavity is formed in the oxide layer between the buried contact and its adjacent interconnect polysilicon element. A self-aligning silicide process (salicide) is used to coat the interconnect polysilicon, the cavity, and the buried contact, to form a continuous electrical connection between the interconnect polysilicon and the buried contact.
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Trap et al., "Trends in Plasma Etch Chemistry", Semiconductor Technology Handbook, Photo & Etch, pp. 4-21.
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