Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1999-05-26
2000-11-14
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117218, 117222, 117900, C30B 3500
Patent
active
061464597
ABSTRACT:
Czochralski pullers are modified to grow perfect monocrystalline silicon ingots that are free of vacancy agglomerates and interstitial agglomerates, by modifying components of the Czochralski puller to produce a temperature gradient at the ingot-melt interface that is greater than about 2.5 degrees Kelvin per millimeter at the ingot axis and is also at least about equal to the temperature gradient at a diffusion length from the cylindrical edge of the ingot. By producing a temperature gradient at the ingot-melt interface that is greater than about 2.5 degrees Kelvin per millimeter at the ingot axis and that is also at least about equal to the temperature gradient at a diffusion length from the diffusion edge, an ingot-melt interface that is planar or is convex relative to the silicon melt may be produced. The ingot so pulled is sliced into a plurality of pure silicon wafers that may include point defects but that are free of vacancy agglomerates and interstitial agglomerates.
REFERENCES:
patent: 3951729 (1976-04-01), Takagi et al.
patent: 5248378 (1993-09-01), Oda et al.
patent: 5485803 (1996-01-01), Habu
patent: 5779791 (1998-07-01), Korb et al.
patent: 5972106 (1999-10-01), Ohta et al.
Park et al., Effect of Crystal Defects on Device Characteristics, Proceeding of 2.sup.nd International Symposium on Advanced Science and Technology Si Material, Kona Hawaii, Nov. 25-29, 1996.
Voronkov, The Mechanism of Swirl Defects Formation in Silicon, Journal of Crystal Growth, V. 59, 1982, pp. 625-643.
Hiteshew Felisa
Samsung Electronics Co,. Ltd.
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