Czochralski method for single crystal growing of a compound semi

Details Czochralski method for single crystal growing of a compound semi Czochralski method for single crystal growing of a compound semi

1987-04-29

1989-07-11

Doll, John

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566202, 156607, 156605, 156DIG70, C30B 2702

Patent

active

048469270

ABSTRACT:
The invention provides a method of high productivity for the preparation of a substantially dislocation-free single crystal of a compound semiconductor such as gallium arsenide by the liquid-encapsulated Czochralski method. The improvement provided by the invention comprises admixing the melt in the crucible with an additive having an equilibrium segregation coefficient K.sub.O smaller than 1.0, which is indium in the preparation of gallium arsenide single crystals, in a concentration of at least 1.0.times.10.sup.21 atoms/cm.sup.3 of the melt and rotating the crucible at an unusually high velocity of at least 40 rpm.

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Ono et al., "Cellular Growth and In-Concentrated Inclusions in LEC In-Doped GaAs Crystals", J. Crys. Growth 74(1986) 446-452.
Yamada et al., "Elimination of Grown-in Dislocations in In-Doped Liquid Encapsulated Czochralski GaAs", J. Crys. Growth 78(1986) 36-42.
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