Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2005-06-21
2005-06-21
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S018000, C117S033000, C117S214000, C117S932000
Reexamination Certificate
active
06908509
ABSTRACT:
Additional charge of a solid raw material13in the shapes of granules/lumps, low in raw material cost, and with no risk of cracking, is performed into a molten raw material14in a crucible in a static manner without solidifying a surface of the molten raw material14in the crucible3. A bottom of a cylindrical raw material vessel10made of a material non-meltable when being in contact with the molten raw material14in the crucible3is closed with a bottom cover11made of a material meltable and removable when being in contact with the molten raw material14in the crucible3. The raw material vessel10in a state of being filled with the solid raw material13in the shapes of granules/lumps is hung down above the crucible3to immerse the lower portion thereof into the molten raw material14in the crucible3. The bottom cover11is molten and removed by putting the bottom cover11into contact with the molten raw material14in the crucible3to thereby charge the solid raw material13in the raw material vessel10into the molten raw material14in the crucible3.
REFERENCES:
patent: 5492079 (1996-02-01), Geissler et al.
patent: 5690733 (1997-11-01), Nagai et al.
patent: 5902396 (1999-05-01), Purdy
patent: 6106617 (2000-08-01), Yatsurugi
patent: 6805746 (2004-10-01), Moroishi et al.
Kunemund Robert
Morrison & Foerster / LLP
Sumitomo Mitsubishi Silicon Corporation
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