Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-04-15
2000-05-30
Picardat, Kevin M.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438584, 438597, 438618, H01L 214763
Patent
active
060690720
ABSTRACT:
A structure and method incorporating a CVD TiN barrier layer 230 over the aluminum plug 220 in order to prevent the high plug resistance caused by the blanket metal film stack 240, 250, and 260 deposition process. Unlike physical vapor deposited (PVD) TiN, CVD TiN 230 does not react with the aluminum 220 during annealing. CVD TiN has also been shown to be a better diffusion barrier for aluminum than PVD TiN. In addition, CVD TiN will disrupt any unfavorable grain boundary propagation through the aluminum plug which may act as a source of electromigration failure. Therefore, the CVD TiN 230 can increase the electromigration resistance, without increasing the contact/via resistance.
REFERENCES:
patent: 5288665 (1994-02-01), Nulman
patent: 5688718 (1997-11-01), Shue
patent: 5744386 (1998-04-01), Kenney
1995 IEEE, "Fully Planarized Four-Level Interconnection With Stacked Vias Using CMP of Selective CVD-A1 and Insulator and its Application to Quarter Micron Gate Array LSIs," pp. 18.8.1-18.8.2 (T. Amazawa, E. Yamamoto, K. Sakuma, Y. Ito, K. Kamoshida, K. Ikeda, K. Saito, H. Ishii, S. Kato, S. Yagi, K. Hiraoka, T. Ueki, T. Takeda and Y. Arita).
1995 American Vacuum Society, "Chemical Vapor Deposition TiN Process for Contact/Via Barrier Applications", pp. 2105-2114 (Ajit Paranjpe and Mazhar IslamRaja).
Jpn. J. Appl. Phys. vol. 33, Part 1, No. 1B, Jan. 1994, "Characterization of Direct-Contact Via Plug Formed by Using Selective Aluminum Chemical Vapor Deposition", pp. 424-428, (Nobuyuki Takeyasu, Yumiko Kawano, Eiichi Kondoh, Tomoharu Katagiri, Hiroshi Yamamoto, Tomohiro Ohta).
Conference Proceedings ULSI-X 1995 Materials Research Society, "Via Plugging by Selective-CVD-A1: Pretreatment of Via Holes With or Without Cap-Metal", pp. 487-495, (N. Takeyasu, E. Kondoh, Y. Kawano and T. Ohta).
Dixit Girish Anant
Konecni Anthony J.
Brady III W. James
Collins Deven M.
Donaldson Richard L.
Garner Jacqueline J.
Picardat Kevin M.
LandOfFree
CVD tin barrier layer for reduced electromigration of aluminum p does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with CVD tin barrier layer for reduced electromigration of aluminum p, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CVD tin barrier layer for reduced electromigration of aluminum p will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1909904