CVD reactor with RF-heated process chamber

Details CVD reactor with RF-heated process chamber CVD reactor with RF-heated process chamber

2005-12-12

2011-11-22

Kackar, Ram (Department: 1716)

Coating apparatus

Gas or vapor deposition

With treating means

C118S724000

Reexamination Certificate

active

08062426

ABSTRACT:
The invention concerns a deposition device in particular of crystalline coatings on at least one substrate in particular crystalline. Said device comprises a treatment chamber (5) consisting of a number of wall elements (1, 2, 3, 4), said wall elements (1, 2, 3, 4) being electroconductive and placed end-to-end, thus forming contacts (2′, 2″, 3′, 3″); a reactor housing (6) enclosing the wall elements (1, 2, 3, 4) of the treatment chamber and made of a non-electroconductive material and a RF-heated coil surrounding the wall elements (1, 2, 3, 4) of the treatment chamber. The invention is characterized in that a massive single-piece shield heating pipe (8) is implanted between the reactor housing (6) and the walls (1, 2, 3, 4) of the treatment chamber. The material of said pipe is electroconductive so that it is heated by the eddy currents induced therein by the RF field generated by the RF coil and so that it absorbs considerably the RF field and heats the walls (1, 2, 3, 4) of the treatment chamber.

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Aixtron AG, PCT/EP2005/056679, International Search Report and Written Opinion, Feb. 20, 2006, 11pp, ISA/EP.

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