CVD reactor for uniform heating with radiant heating filaments

Coating apparatus – Gas or vapor deposition – With treating means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

118730, C23C 1600

Patent

active

057592810

ABSTRACT:
Apparatus for the growth of epitaxial layers is disclosed. The apparatus includes a wafer carrier mounted within a growth chamber, a reactant inlet for introducing a reactant into the chamber, and a heating element mounted within the chamber for heating wafers mounted on the wafer carrier. The heating element is mounted in a manner which permits unrestricted thermal expansion of the heating element therein.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

CVD reactor for uniform heating with radiant heating filaments does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CVD reactor for uniform heating with radiant heating filaments, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CVD reactor for uniform heating with radiant heating filaments will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1454759

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.