CVD/PVD method of filling structures using discontinuous CVD AL

Details CVD/PVD method of filling structures using discontinuous CVD AL CVD/PVD method of filling structures using discontinuous CVD AL

1998-06-26

2000-05-02

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438672, H01L 2144

Patent

active

060572361

ABSTRACT:
Improved methods for forming metal-filled structures in openings on substrates for integrated circuit devices are obtained by the formation of a discontinuous metal liner by CVD in an opening to be filled. The discontinuous metal liner surprisingly provides wetting equivalent to or better than continuous layer CVD liners. The CVD step is followed by depositing a further amount of metal by physical vapor deposition over the discontinuous layer in the opening, and reflowing the further amount of metal to obtain the metal-filled structure.
The interior surface of the opening is preferably a conductive material such as titanium nitride. Preferably, the discontinuous metal layer is made of aluminum. The metal deposited by PVD is preferably aluminum or an aluminum alloy. The methods of the invention are especially useful for the filling of contact holes, damascene trenches and dual damascene trenches. The methods of the invention are especially useful for filling structures having an opening width less than 250 nm.

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