CVD Process for producing monocrystalline silicon-on-cubic zirco

Details CVD Process for producing monocrystalline silicon-on-cubic zirco CVD Process for producing monocrystalline silicon-on-cubic zirco

1982-05-03

1984-05-08

Lacey, David L.

Stock material or miscellaneous articles

Composite

Of silicon containing

428700, 156605, 156612, 156613, 156DIG66, 156DIG95, C30B 2306, C30B 2518, H01L 21205

Patent

active

044474970

ABSTRACT:
A method for producing monocrystalline semiconductor-on-insulator structures and article produced thereby, by the steps of heat treating a polished substrate of cubic zirconia to approximately 1150.degree.-1400.degree. C. for time to remove sufficient oxygen from the substrate in order to stabilize the surface; lowering the temperature to below 1075.degree. C.; and depositing a thin monocrystalline layer of a semiconductor material on the stabilized surface, by a chemical vapor deposition process.

REFERENCES:
patent: 3414434 (1968-12-01), Manasevit
patent: 3475209 (1969-10-01), Manasevit
patent: 3493430 (1970-02-01), Manasevit
patent: 3515576 (1970-06-01), Manasevit
patent: 3661636 (1972-05-01), Green et al.
patent: 3796597 (1974-03-01), Porter et al.
patent: 3847686 (1974-11-01), Stein
patent: 3864162 (1975-02-01), Kenty
patent: 3926715 (1975-12-01), Sussmann
patent: 4105456 (1978-08-01), Murakami et al.
patent: 4177321 (1979-12-01), Nishizawa
patent: 4220483 (1980-09-01), Cazcarra
V. S. Stubican, R. C. Hink, and S. P. Ray, "Phase Equilibria and Ordering in the System ZrO.sub.2 -Y.sub.2 O.sub.3," J. Amer. Ceramic Society (attached).
Information to Offerors Or Quoters, F33615-81-R-5041, U.S. Air Force.

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