CVD method for forming a photoconductive hydrogenated a-Si layer

Details CVD method for forming a photoconductive hydrogenated a-Si layer CVD method for forming a photoconductive hydrogenated a-Si layer

1995-05-23

1996-12-17

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427573, 427574, 427 74, 4272555, 430128, B05D 306, G03G 500

Patent

active

055851495

ABSTRACT:
A layer of amorphous silicon containing H, preferably 10-40 atomic % H, which is used as a photoconductive layer for electrophotographic photosensitive member, is formed by plasma CVD using a silane gas of a higher than monosilane.

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