Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1996-02-05
1997-12-09
Beck, Shrive
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427253, 4272551, 427584, C23C 1608
Patent
active
056958315
ABSTRACT:
A CVD method for forming a tungsten (W) film, by using a metallic halide (WF.sub.6) as a source gas, on a barrier metallic film containing titanium (Ti). The method includes providing to the edge portion of a wafer a mixed gas containing Ar gas as an inactive gas and a first gas capable of reacting with the halogen atoms in the metallic halide. The first gas is selected from a group consisting of ethylene, acetylene, butene, propylene, a substitute product thereof, and silane, which have .pi. electrons for activation of reaction with the halogen atoms. When an ethylene gas is used in the mixed gas, the the ethylene gas preferably flows at a flow rate of 2 to 7 percent of the flow rate of the Ar gas flowing at a rate of 1000 to 3000 sccm.
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Beck Shrive
Meeks Timothy
NEC Corporation
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