CVD gas injector and method therefor

Details CVD gas injector and method therefor CVD gas injector and method therefor

2006-08-01

2006-08-01

Cao, Phat X. (Department: 2814)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S711000

Reexamination Certificate

active

07084074

ABSTRACT:
Chemical vapor deposition (CVD) is enhanced by compensating for a depleted gas concentration zone in a CVD reactor. According to an example embodiment of the present invention, a chemical-vapor deposition (CVD) gas injector is adapted to supply gas to a CVD chamber in a manner that enhances the properties of deposited films. The injector has a gas inlet coupled to a gas source and supplies gas from the source to the CVD system via at least one gas outlet. The injector is adapted to deliver gas in a manner that sufficiently maintains uniform supply of the gas in a zone of the CVD system that would exhibit a depleted gas supply absent the injector. The uniform gas supply improves the CVD process in various manners, including making possible the deposition of films having uniform properties, such as reflectivity, extinction coefficient, thickness and refractive index.

REFERENCES:
patent: 5015330 (1991-05-01), Okumura et al.
patent: 5710073 (1998-01-01), Jeng et al.
patent: 6143080 (2000-11-01), Bartholomew et al.

Affiliated with

Also associated with

Rating

CVD gas injector and method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CVD gas injector and method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CVD gas injector and method therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3687740