CVD diamond by alternating chemical reactions

Details CVD diamond by alternating chemical reactions CVD diamond by alternating chemical reactions

1992-10-05

1994-04-12

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG68, 423446, 427249, 4272551, 437100, C30B 2500

Patent

active

053022319

ABSTRACT:
The present invention relates to a method for growing diamond on a diamond substrate by chemical vapor deposition. The inventive method comprises alternatingly contacting at elevated temperature said diamond substrate with a gas having the formula C.sub.n X.sub.m and then with a gas having the formula C.sub.l Z.sub.p. X and Z each form single bonds with carbon. X and Z also are reactable to form ZX or a derivative thereof. The Z--X bond is stronger than the C--X bond and also is stronger than the C--Z bond. In the formulas, n, m, l, and p are integers. If C.sub.n X.sub.m and C.sub.l Z.sub.p do not react in the gas phase, then a gas mixture of them can be used to grow diamond instead of the alternating exposure of one and then the other.

REFERENCES:
patent: 3030188 (1962-04-01), Eversole
patent: 4882138 (1989-11-01), Pinneo
patent: 4915977 (1990-04-01), Okamoto et al.
patent: 4981818 (1991-01-01), Anthony et al.
patent: 5071677 (1991-12-01), Patterson et al.

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