Custom electrodes for molecular memory and logic devices

Details Custom electrodes for molecular memory and logic devices Custom electrodes for molecular memory and logic devices

2005-02-15

2005-02-15

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S798000, C438S474000, C438S513000, C438S691000

Reexamination Certificate

active

06855647

ABSTRACT:
A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3over the conductive layer.

REFERENCES:
patent: 5232747 (1993-08-01), Evans, Jr.
patent: 5990559 (1999-11-01), Marsh
patent: 6025205 (2000-02-01), Park et al.
patent: 6054331 (2000-04-01), Woo et al.
patent: 6078072 (2000-06-01), Okudaira et al.
patent: 6128214 (2000-10-01), Kuekes et al.
patent: 6187682 (2001-02-01), Denning et al.
patent: 6214661 (2001-04-01), Lee et al.
patent: 6308405 (2001-10-01), Takamatsu et al.
patent: 6312567 (2001-11-01), Lee et al.
patent: 6314019 (2001-11-01), Kuekes et al.
patent: 6395148 (2002-05-01), Whitman
patent: 6458621 (2002-10-01), Beck
patent: 6459095 (2002-10-01), Heath et al.
patent: 6498097 (2002-12-01), Park et al.
patent: 6613699 (2003-09-01), Banba et al.
patent: 20040002205 (2004-01-01), Chen et al.
C.P. Collier, et al., “Electronically Configurable Molecular-Based Logic Gates,” SCIENCE, vol. 285, Jul. 16, 1999, pp. 391-393.
C.P. Collier, et al., “A [2] Catenane-Based Solid State Electronically Reconfigurable Switch,” SCIENCE, vol. 289, Aug. 18, 2000, pp. 1172-1175.
M.A. Reed, et al., “Conductance of a Molecular Junction,” SCIENCE, vol. 278, Oct. 10, 1997, pp. 252-254.
J. Chen, et al., “Large On-Off Ratios and Negative Differential Resistance in a Molecular Electronic Device,” SCIENCE, vol. 286, Nov. 19, 1999, pp. 1550-1551.

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