Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2007-07-03
2007-07-03
Mai, Son L. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S158000, C365S171000
Reexamination Certificate
active
10767428
ABSTRACT:
A magnetic memory cell write current threshold detector. The magnetic memory cell write current threshold detector includes a first MRAM test cell receiving a write current and sensing when the write current exceeds a first threshold, and a second MRAM test cell receiving the write current and sensing when the write current exceeds a second threshold.
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Bhattacharyya Manoj K.
Perner Frederick A.
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