Current sensing circuit with a current-compensated drain...

Details Current sensing circuit with a current-compensated drain... Current sensing circuit with a current-compensated drain...

2006-08-29

2006-08-29

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S210130, C365S206000

Reexamination Certificate

active

07099204

ABSTRACT:
The present invention facilitates more accurate data reads by compensating for parasitic behavior—thus regulating the voltage at the drain of a core memory cell rather than at the output of a sensing circuit. More particularly, respective voltages at one or more nodes, such as the start of a bitline at a sensing circuit, for example, are adjusted to compensate for voltage drops that may occur due to parasitic behavior. Maintaining the substantially constant voltage levels at core memory cells allows comparisons to be made under ideal conditions while reducing the side leakages in virtual ground schemes. This mitigates margin loss and facilitates more reliable data sensing.

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“Virtual-Ground Sensing Techniques for Fast, Low-Power, 1.8V Two-Bit-Per-Cell Flash Memories”, Binh Quang Le, A Dissertation Submitted to the Department of Electrical Engineering and the Committee on graduate studies of Stanford University in partial fulfillment of the requirements for the degree of Doctor of Philosophy, Nov. 2003, 148 pgs.

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