Current sensing architecture for high bitline voltage, rail...

Details Current sensing architecture for high bitline voltage, rail... Current sensing architecture for high bitline voltage, rail...

2008-07-08

2008-07-08

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S189110

Reexamination Certificate

active

11023914

ABSTRACT:
The present invention pertains to a circuit arrangement that, in one example, facilitates reading or determining an amount of current that flows through a memory cell when one or more voltages are applied to the cell. The amount of current resulting from the applied voltages is a function of the amount of charge stored within the cell, among other things, and the amount of stored charge represents information stored within the cell. As such, reading the resulting current allows data stored within the cell to be accessed and retrieved. It will be appreciated however, that use of the circuitry disclosed herein is not limited to memory applications. Rather, it can be used in any application where current sensing is required along with a regulated supply voltage.

REFERENCES:
patent: 4884241 (1989-11-01), Tanaka et al.
patent: 5625585 (1997-04-01), Ahn et al.
patent: 5663904 (1997-09-01), Arase
patent: 6054879 (2000-04-01), Meng
patent: 6212092 (2001-04-01), Shinozaki
patent: 6370061 (2002-04-01), Yachareni et al.
patent: 6510082 (2003-01-01), Le et al.
patent: 6529412 (2003-03-01), Chen et al.
patent: 6791880 (2004-09-01), Kurihara et al.
patent: 6819591 (2004-11-01), Kurihara et al.
patent: 2002/0176281 (2002-11-01), Tang
“Virtual-Ground Sensing Techniques for Fast, Low-Power, 1.8V Two-Bit-Per-Cell Flash Memories”, Binh Quang Le, A Dissertation Submitted to the Department of Electrical Engineering and the Committee on graduate studies of Stanford University in partial fulfillment of the requirements for the degree of Doctor of Philosophy, Nov. 2003, 148 pgs.

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