Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-31
2009-11-17
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
07619280
ABSTRACT:
The active area of a current sense die is surrounded by a transition region which extends to the terminating periphery of the die. Spaced parallel MOSgated trenches extend through and define an active area. The trench positions in the transition region are eliminated or are deactivated, as by shorting to the MOSFET source of the trench, or by removing the source regions in areas of the transition region. By inactivating MOSgate action in the transition region surrounding the source, the device is made less sensitive to current ratio variation due to varying manufacturing tolerances. The gate to source capacitance is increased by surrounding the active area with an enlarged P+field region which is at least five times the area of the active region, thereby to make the device less sensitive to ESD failure.
REFERENCES:
patent: 6072214 (2000-06-01), Herzer et al.
patent: 6906355 (2005-06-01), Kurosaki et al.
patent: 2004/0222458 (2004-11-01), Hsieh et al.
patent: 2005/0035398 (2005-02-01), Williams et al.
Cao Jianjun
Kinzer Daniel M.
Spring Kyle
Xiao Ying
Farjami & Farjami LLP
International Rectifier Corporation
Nguyen Dao H
Nguyen Tram H
LandOfFree
Current sense trench type MOSFET with improved accuracy and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Current sense trench type MOSFET with improved accuracy and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Current sense trench type MOSFET with improved accuracy and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4066453