Current regulating semiconductor integrated circuit device and f

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257261, 257268, 257341, 257348, 257350, 257368, 257390, 257391, 257393, 257402, 257508, 257907, 257910, 438237, 438281, 438128, H01L 2976, H01L 2104

Patent

active

056635893

ABSTRACT:
A semiconductor integrated device having a current regulating diode may be substantially reduced in size and improved in performance by forming the current regulating diode of a plurality of MOS transistors each having a gate, a drain region, and a source region formed in a semiconductor substrate, the source regions and the substrate regions being electrically coupled to each other, the drain regions of at least two of the MOS transistors being electrically coupled, and the source regions of each of the MOS transistors being electrically coupled, the coupled drain regions, the coupled source regions, and the coupled gates forming a drain terminal, a source terminal and a gate terminal, respectively. In order to set a desired regulated current, selected coupling lines in the current regulating diode may be cut. This may be accomplished, for example, by measuring a first current which flows in the drain terminal while applying a first voltage to the gate terminal and a second voltage to the drain terminal relative to an electric potential of the source terminal, then measuring a second current which flows in the drain terminal while applying a third voltage to the gate terminal and the second voltage to the drain terminal relative to an electric potential of the source terminal. In order to achieve the desired current characteristic, selected conductive lines between coupled drains or between coupled sources are then cut.

REFERENCES:
patent: 5089862 (1992-02-01), Warner et al.

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