Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2007-10-09
2007-10-09
Mai, Son L. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S185200, C365S185210, C365S210130
Reexamination Certificate
active
11443036
ABSTRACT:
A current-mode sensing structure of a high-density multiple-port register in embedded flash memory procedure and a method for the same are proposed. A multiple-port register file cell is used to send out a select signal of “0” or “1”. Based on this select signal, a turn-on voltage and a cell current are output. Next, a dummy bit line of an embedded dummy flash cell is used to define a reference voltage according to the turn-on voltage and generate a corresponding reference current. Finally, the cell current and the reference current are sent to a current comparator amplifier, which senses and outputs a difference value between the cell current and the reference current to perform session at once (SAO) recording. Because the difference value has only two possibilities: the reference current or its negative, the sensing time of the current comparator amplifier can be shortened.
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Grace Semiconductor Manufacturing Corporation
Mai Son L.
Rosenberg , Klein & Lee
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