Static information storage and retrieval – Read/write circuit – Having fuse element
Reexamination Certificate
2007-06-11
2009-02-24
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having fuse element
C365S096000, C327S525000, C327S053000
Reexamination Certificate
active
07495987
ABSTRACT:
Methods and corresponding systems for reading a memory cell include a first current sourced from a first current source into a summing node, wherein the first current source is coupled to a first reference. A second current is sourced from a second current source into the summing node, wherein the second current source is coupled to the first reference through a programmable fuse. A third current is sunk from the summing node with a current sink, wherein the current sink is coupled to a second reference, and wherein a third current limit is greater than a first current limit and less than the sum of the first current limit and the second current limit. A voltage at the summing node is output in response to the first current, the second current, and the third current. The first and second current sources, and the current sink can be current mirrors.
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Boas Andre Luis Vilas
De Barros Soldera Jefferson Daniel
De Lacerda Fabio
Olmos Alfredo
Bethards Charles W.
Freescale Semiconductor Inc.
Nguyen Van-Thu
Wendler Eric
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