Current mirror sense amplifier for a non-volatile memory

Details Current mirror sense amplifier for a non-volatile memory Current mirror sense amplifier for a non-volatile memory

1985-11-25

1987-12-15

Hecker, Stuart N.

Static information storage and retrieval

Read/write circuit

Differential sensing

365185, 365210, 307530, 330257, G11C 702

Patent

active

047137975

ABSTRACT:
A non-volatile memory has memory cells which have a first or a second conductivity. A reference current is established through an unprogrammed reference cell which has the first conductivity. A logic state current is established through a selected memory cell. The magnitude of the logic state current is related to the conductivity of the selected memory cell. A current comparator is used to compare the reference current to the logic state current. If the logic state current is related to the first conductivity state, an output signal is provided at a first logic state. If the logic state current is related to the second conductivity state, the output signal is provided at a second logic state.

REFERENCES:
patent: 4301518 (1981-11-01), Klaas
patent: 4371956 (1983-02-01), Maeda et al.
Hosticka, "Dynamic Amplifiers in CMOS Technology", Institute of Telecommunications, Swiss Federal Institute of Technology, 10-26-79.
Saito et al., "A Programmable 80ns 1Mb CMOS EPROM", IEEE ISSCC Digest of Technical Papers, 2-14-85, pp. 176-177, 340.

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