Current limiting during block writes of memory circuits

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

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365190, 36518901, G11C 700

Patent

active

057401160

ABSTRACT:
A circuit and a method for limiting current during block write operations in memory integrated circuits such as graphics or video RAMs. A bias line for all sense amplifiers located between two memory sub-arrays is divided into independent segments connected to groups of sense amplifiers. Each segment is biased by a separate sense amplifier enable transistor. With much reduced loading, each enable transistor connected to a segmented bias line is significantly smaller in size. Thus, the sense amplifier crowbar or switching current is significantly reduced when writing a block of data of opposite polarity into a block of memory cells.

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patent: 5517444 (1996-05-01), Ishimura

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