Current limited current reference for non-volatile memory sensin

Details Current limited current reference for non-volatile memory sensin Current limited current reference for non-volatile memory sensin

1993-08-31

1997-03-04

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

365210, G11C 700

Patent

active

056086768

ABSTRACT:
A non-volatile memo includes the reference cells programmed to opposite logic states whose outputs are combined and then equally divided to provide a reference signal to a sense amplifier which is one half of the sum of the signals from a high conductivity data cell and a low conductivity data cell. The non-volatile memory also includes a bias voltage generator which uses a high conductivity non-volatile reference cell for a reference, and which produces a bias voltage which is coupled to current limiting transistors at the inputs of the sense amplifier so that the current into the sense amplifier is limited and therefore limits the power used by the non-volatile memory.

REFERENCES:
patent: 4713797 (1987-12-01), Morton et al.
patent: 5045772 (1991-09-01), Nishiwaki et al.
patent: 5148063 (1992-09-01), Hotta
patent: 5163021 (1992-11-01), Mehrotra et al.

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