Current leakage measurement

Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed

Reexamination Certificate

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C324S754120

Reexamination Certificate

active

06855569

ABSTRACT:
A method for detecting current leakage of a film on a substrate. The film is repeatedly irradiated with an electron beam, thereby causing the film to emit x-rays. The emitted x-rays are detected with an x-ray detector, the detected x-rays emitted with each repeated irradiation of the film are counted to produce an x-ray count rate. The trend of the x-ray count rate is determined, and the current leakage of the film is determined from the trend of the x-ray count rate.

REFERENCES:
M. Ceschia et al., “Low Field Leakage Current and Soft Breakdown in Ultra-Thin gate Oxides After Heavy Ions, Electrons or X-ray Irradiation,” Jun. 2000, IEEE Transactions on Nuclear Science, pp. 566-573.

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