Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2005-02-15
2005-02-15
Pert, Evan (Department: 2829)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C324S754120
Reexamination Certificate
active
06855569
ABSTRACT:
A method for detecting current leakage of a film on a substrate. The film is repeatedly irradiated with an electron beam, thereby causing the film to emit x-rays. The emitted x-rays are detected with an x-ray detector, the detected x-rays emitted with each repeated irradiation of the film are counted to produce an x-ray count rate. The trend of the x-ray count rate is determined, and the current leakage of the film is determined from the trend of the x-ray count rate.
REFERENCES:
M. Ceschia et al., “Low Field Leakage Current and Soft Breakdown in Ultra-Thin gate Oxides After Heavy Ions, Electrons or X-ray Irradiation,” Jun. 2000, IEEE Transactions on Nuclear Science, pp. 566-573.
KLA-Tencor Technologies Corporation
Luedeka Neely & Graham P.C.
Pert Evan
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