Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2009-02-25
2010-11-30
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S013000, C257S023000, C257S046000, C257S079000, C257S098000
Reexamination Certificate
active
07842939
ABSTRACT:
An apparatus and method for making it. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure. In some embodiments, at least one of the GEMM is deposited on, and lattice matched to, a substrate.
REFERENCES:
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Jorgenson Robbie J.
King David J.
King David J.
Lemaire Charles A.
Lemaire Patent Law Firm, P.L.L.C.
Lightwave Photonics, Inc.
Pham Long
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