Metal line of semiconductor device without production of...

Details Metal line of semiconductor device without production of... Metal line of semiconductor device without production of...

2008-12-05

2010-12-21

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S734000, C257SE23160, C257SE21584, C438S627000, C438S643000, C438S653000

Reexamination Certificate

active

07855456

ABSTRACT:
A metal line includes a lower metal line formed on a semiconductor substrate. An insulation layer is formed on the semiconductor substrate having the lower metal line, and a metal line forming region exposing at least a portion of the lower metal line is defined in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and includes a WNxlayer, a W—N—B ternary layer, and a Ti—N—B ternary layer. A wetting layer is formed on the diffusion barrier and is made of one of a Ti layer or a TiN layer. An upper metal line is formed on the wetting layer to fill the metal line forming region of the insulation layer.

REFERENCES:
patent: 6284646 (2001-09-01), Leem
patent: 2003/0224217 (2003-12-01), Byun et al.
patent: 2006/0170103 (2006-08-01), Suh et al.
patent: 2006/0276033 (2006-12-01), Nguyen et al.
patent: 1019980072437 (1999-11-01), None
patent: 1020040056111 (2004-06-01), None
patent: 1020040077042 (2004-09-01), None
patent: 1020050106916 (2005-11-01), None

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