Current induced magnetoresistance device

Details Current induced magnetoresistance device Current induced magnetoresistance device

2005-10-28

2009-12-01

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C365S225500, C365S243500

Reexamination Certificate

active

07626857

ABSTRACT:
Provided is a current induced switching magnetoresistance device comprising a magnetic multilayer composed of a first ferromagnetic layer, a nonferromagnetic layer, and a second ferromagnetic layer, wherein the first ferromagnetic layer has an upper electrode, the second ferromagnetic layer pinned by an antiferromagnet, wherein the antiferromagnet contains a lower electrode at its lower part, and the second ferromagnetic layer is embedded with a nano oxide layer. It is preferable to have at least a part of the lower electrode in contact with the second ferromagnetic layer. The magnetoresistance device provides a lower critical current (Ic) for the magnetization reversal and has an increased resistance.

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