Current dump circuit for bipolar random access memories

Details Current dump circuit for bipolar random access memories Current dump circuit for bipolar random access memories

1982-01-18

1984-10-16

Hecker, Stuart N.

Static information storage and retrieval

Read/write circuit

Accelerating charge or discharge

365242, 365190, G11C 702, G11C 800

Patent

active

044778856

ABSTRACT:
Circuitry for rapidly discharging a row of RAM cells upon deselection of the word line. The word line switching transistor collector current is sensed and corresponding voltage level signals are applied to a second switching transistor between the bottom word line of the memory row and a large dump current source. The emitter of the second switching transistor is clamped at a level that will permit the switching transistor to turn on only when there is no emitter current through the word line switching transistor to thereby rapidly discharge the capacitive row of memory cells and therefore improve the operating speed of the memory.

REFERENCES:
patent: 3765002 (1973-10-01), Basse
patent: 4168490 (1979-09-01), Stinehelfer
patent: 4357687 (1982-11-01), Rufford

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