Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-09-18
2007-09-18
Ho, Hoai V. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S207000, C365S209000, C365S210130
Reexamination Certificate
active
11217258
ABSTRACT:
A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each of the plurality of magnetic storage cells includes at least one magnetic element and a plurality of selection transistors. The at least one magnetic element is capable of being programmed using spin transfer induced switching by a write current driven through the at least one magnetic element. The at least one selection transistor is configured to allow the magnetic element to be alternately selected for writing and reading. Architectures for reading and writing to the magnetic storage cells are also described.
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Chen Eugene Youjun
Huai Yiming
Grandis Inc.
Ho Hoai V.
Strategic Patent Group P.C.
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