Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2008-05-27
2008-05-27
Luu, Pho M. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
07379327
ABSTRACT:
A method and system for providing a magnetic memory. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.
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Chen Eugene Youjun
Huai Yiming
Luo Xiao
Panchula Alex Fischer
Wang Lien-Chang
Grandis Inc.
Luu Pho M.
Renesas Technology Corp.
Strategic Patent Group P.C.
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