Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-10-23
2007-10-23
Ho, Hoai V. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S173000, C365S210130, C365S230030
Reexamination Certificate
active
11260778
ABSTRACT:
A method and system for providing a magnetic memory is described. The magnetic memory includes a plurality of magnetic storage cell and at least one bit line and a plurality of source lines corresponding to the plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element that is programmed to a high resistance state by a first write current driven through the magnetic element in a first direction and to a low resistance state by a second write current driven through the magnetic element in a second direction. The bit line(s) and the source lines are configured to drive the first write current through the magnetic element in the first direction, to drive the second write current through the magnetic element in the second direction, and to drive at least one read current through the magnetic element in a third direction that does not destabilize the low resistance state.
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Eugene Chen and Yiming Huai,Current Driven Switching of Magnetic Storage Cells Utilizing Spin Transfer and Magnetic Memories Using Such Cells, U.S. Appl. No. 11/217,524.
Chen Eugene Youjun
Huai Yiming
Grandis Inc.
Ho Hoai V.
Strategic Patent Group P.C.
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