Current drive circuit avoiding effect of voltage drop caused...

Details Current drive circuit avoiding effect of voltage drop caused... Current drive circuit avoiding effect of voltage drop caused...

2005-04-12

2005-04-12

Ho, Hoai (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S203000, C365S229000, C365S230060

Reexamination Certificate

active

06879513

ABSTRACT:
A current drive circuit operates receiving higher voltage than in a waiting mode at source terminal of a P-channel first driver transistor, when supplying a current to a node connected to a load circuit. In accordance with the rising source potential of the first driver transistor, the gate potential output to the first driver transistor by a gate potential control circuit rises. When the first and second driver transistors are off, a precharge circuit configured with a P-channel MOS transistor precharges the node to a prescribed potential. As a result, the current drive circuit is provided with increased reliability of the gate insulating films of the driver transistors without decreasing the driving current.

REFERENCES:
patent: 6088286 (2000-07-01), Yamauchi et al.
patent: 6256224 (2001-07-01), Perner et al.
patent: 20030123281 (2003-07-01), Iwata et al.
patent: 20030174536 (2003-09-01), Hidaka
patent: 05-347550 (1993-12-01), None

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