Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1998-06-18
2000-11-21
Phan, Trong
Static information storage and retrieval
Read/write circuit
Differential sensing
365208, G11C 702
Patent
active
061512613
ABSTRACT:
The invention provides a high speed sense amplifier of the current detection type employing NPN transistors used for a static operation type RAM which allows high integration and can suppress increase of power dissipation and deterioration in speed even in a high integration condition. Pairs of bit lines to which data of memory cells of a static type RAM are connected are connected to a pair of common data lines through MOS transistors, and the emitter terminals of a pair of bipolar transistors are connected to the data lines while the collector terminals which serve as signal output terminals of the sense amplifier are connected to a first power supply through resistors and the base terminals are connected to a second power supply. Further, a pair of resistance elements for normally supplying current to the sense amplifier therethrough are connected to the emitter terminals of the bipolar transistors.
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H. Nambu et al., High-Speed Sensing Techniques for Ultrahigh-Speed SRAM's, IEEE Journal of Solid-State Circuits, vol. 27, No. 4, (1992), pp. 632-639.
NEC Corporation
Phan Trong
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