Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-03-08
2000-05-23
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257421, 360113, 365158, G11B 539
Patent
active
060668679
ABSTRACT:
In a functional device having a substrate, source and drain regions are formed on the substrate. Each of them includes first electric charge carriers. Each of the first electric charge carriers has the substantially same first spin direction which is fixed to a predetermined direction. An intermediate region is formed between the source and drain regions and includes second electric charge carriers. Each of the second electric charge carries has a second spin direction which is variable. A current line is formed over the intermediate region and applies an external magnetic field to the intermediate region. The second direction is determined in dependency upon the application of the external magnetic filed.
REFERENCES:
patent: 5301079 (1994-04-01), Cain et al.
patent: 5493467 (1996-02-01), Cain et al.
patent: 5748413 (1998-05-01), Lederman et al.
patent: 5862022 (1999-01-01), Noguchi et al.
patent: 5959810 (1999-09-01), Kakihara et al.
Yousuke et al, Spin-Valve Memory Elements Using [(Co-Pt/Cu/Ni-Fe-Co)] Multilayers, Jpn J. Appl. Phys. vol. 34 (1995) pp. L415-L417.
Johnson, M., Spin injection in Metal films: the bipolar spin transistor, Materials Science and Engineering, B31, (1995) pp. 199-205.
Monin, Jr. Donald L.
NEC Corporation
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