Current confinement structure for vertical cavity surface...

Details Current confinement structure for vertical cavity surface... Current confinement structure for vertical cavity surface...

2005-04-05

2005-04-05

Harvey, Mingun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046012

Reexamination Certificate

active

06876687

ABSTRACT:
A vertical cavity surface emitting laser (VCSEL) structure and fabrication method therefor are described in which a subsurface air, gas, or vacuum current confinement method is used to restrict the area of electrical flow in the active region. Using vertical hollow shafts to access a subsurface current confinement layer, a selective lateral etching process is used to form a plurality of subsurface cavities in the current confinement layer, the lateral etching process continuing until the subsurface cavities laterally merge to form a single subsurface circumferential cavity that surrounds a desired current confinement zone. Because the subsurface circumferential cavity is filled with air, gas, or vacuum, the stresses associated with oxidation-based current confinement methods are avoided. Additionally, because the confinement is achieved by subsurface cavity structures, overall mechanical strength of the current-confining region is maintained.

REFERENCES:
patent: 5058120 (1991-10-01), Nitta et al.
patent: 5256596 (1993-10-01), Ackley et al.
patent: 5258316 (1993-11-01), Ackley et al.
patent: 5416044 (1995-05-01), Chino et al.
patent: 5557627 (1996-09-01), Schneider, Jr. et al.
patent: 5559053 (1996-09-01), Choquette et al.
patent: 5594751 (1997-01-01), Scott
patent: 5724376 (1998-03-01), Kish, Jr. et al.
patent: 5831295 (1998-11-01), Huang et al.
patent: 5837561 (1998-11-01), Kish, Jr. et al.
patent: 5985686 (1999-11-01), Jayaraman
patent: 6160830 (2000-12-01), Kiely et al.
patent: 6169756 (2001-01-01), Chirovsky et al.
patent: 6306672 (2001-10-01), Kim
patent: 6465811 (2002-10-01), Peters et al.
patent: 6545335 (2003-04-01), Chua et al.
patent: 6546029 (2003-04-01), Sirbu et al.
patent: 6577658 (2003-06-01), Lee et al.
patent: 6589805 (2003-07-01), Zhu et al.
patent: 6621843 (2003-09-01), Yoo et al.
patent: 20020025589 (2002-02-01), Hall et al.
patent: 20020025590 (2002-02-01), Hall et al.
patent: 20020075922 (2002-06-01), Yoo et al.
patent: 20020101894 (2002-08-01), Colden et al.
patent: 20020126725 (2002-09-01), Tayebati
Choquette, “The Technology of Selectively Oxidized Vertical Cavity Lasers,” at Chapter 2 of Cheng and Dutta, eds.,Vertical-Cavity Surface-Emitting Lasers: Technology and Applications, vol. 10 of Optoelectronic Properties of Semiconductors and Superlattices, Manasreh, ed., Gordon and Breach Science Publishers (2000).
Chua, C.L. et al., “Planar laterally oxidized vertical-cavity lasers for low-threshold high-density top-surface-emitting arrays,” IEEE Photonics Technology Letters , vol. 9, No. 8, pp. 1060-1062 (Aug. 1997).
Deppe, “Optoelectronic Properties of Semiconductors and Superlattices,” at Chapter 1 of Cheng and Dutta, eds.,Vertical-Cavity Surface-Emitting Lasers: Technology and Applications, vol. 10 of Optoelectronic Properties of Semiconductors and Superlattices, Manasreh, ed., Gordon and Breach Science Publishers (2000).
Deppe et al, “Low-threshold vertical cavity surface emitting lasers based on oxide confinement and high contrast distributed Bragg reflectors,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 3, No. 3, pp. 893-904 (Jun. 1997).
Dutton, UnderstandingOptical Communications(Prentice Hall 1998), at pp. 159-161.
Jewell et. al., “Vertical cavity surface emitting lasers: design, growth, fabrication, characterization”, IEEE Journal of Quantum Electronics, vol. 27, No. 6, pp. 1332-1346 (Jun. 1991).
Nishiyama et. al., “Multi-oxide layer structure for single mode operation in vertical cavity surface emitting lasers,” IEEE Photonics Technology Letters, vol. 12, No. 6, pp. 606-608 (Jun. 2000).
Sale, T.E.,Vertical Cavity Surface Emitting Lasers, Wiley & Sons (1995).

Affiliated with

Also associated with

Rating

Current confinement structure for vertical cavity surface... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Current confinement structure for vertical cavity surface..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Current confinement structure for vertical cavity surface... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3379451