Current cancellation for non-volatile memory

Details Current cancellation for non-volatile memory Current cancellation for non-volatile memory

2011-06-21

2011-06-21

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Read/write circuit

Particular read circuit

C365S230060, C365S210100, C365S203000, C365S189090

Reexamination Certificate

active

07965565

ABSTRACT:
A method and apparatus for reading data from a non-volatile memory cell. In some embodiments, a cross-point array of non-volatile memory cells is arranged into rows and columns that are each controlled by a line driver. A read circuit is provided that is capable of reading a logical state of a predetermined memory cell by differentiating a non-integrated first reference value from a non-integrated second reference value. Further, each reference value is measured immediately after configuring the column corresponding to the predetermined memory cell to produce a first and second amount of current.

REFERENCES:
patent: 6570440 (2003-05-01), Chow et al.
patent: 6952375 (2005-10-01), Dahl
patent: 7057969 (2006-06-01), Chow et al.
patent: 2010/0085797 (2010-04-01), Li et al.
S. T Hsu, W. W. Zhuang, T. K. Li, W. Pan, A. Ignatiev, C. Papagianni, and N. J. Wu, “RRAM Switching Mechanism,” Technology Symposium, Nov. 2005, pp. 121-124, IEEE.

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