Cu film deposition equipment of semiconductor device

Details Cu film deposition equipment of semiconductor device Cu film deposition equipment of semiconductor device

2005-02-15

2005-02-15

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S680000, C438S652000, C438S653000, C438S627000, C438S628000, C257S762000

Reexamination Certificate

active

06855632

ABSTRACT:
A Cu thin film deposition equipment of a semiconductor device is disclosed for improving deposition speed of a Cu thin film and lowering its corresponding cost. This equipment includes a load lock carrying out the steps before and after wafer processes, an aligner carrying out alignment so that a wafer reaches a desired position, a de-gas chamber removing residue such as gas produced on a surface of a wafer, and a feeding chamber provided with a robot placing the wafer in/out of each chamber. A pre-cleaning chamber cleaning the inside and the outside of a pattern using plasma on a wafer fed by the feeding chamber, a barrier metal deposition chamber, an adhesion glue layer (AGL) flash Cu deposition chamber, a CECVD deposition chamber, and a plasma treatment chamber are also provided with the equipment.

REFERENCES:
patent: 6337276 (2002-01-01), Pyo
patent: 6346478 (2002-02-01), Pyo et al.
patent: 6362099 (2002-03-01), Gandikota et al.
patent: 6492268 (2002-12-01), Pyo
patent: 6495449 (2002-12-01), Nguyen

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