Crystallographic etching of III-V semiconductor materials

Details Crystallographic etching of III-V semiconductor materials Crystallographic etching of III-V semiconductor materials

1982-10-01

1983-08-09

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156647, 1566591, 156662, 204192E, 252 791, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

043977111

ABSTRACT:
Crystallographic etching in III-V semiconductor materials such as GaAs is achieved, for example, by utilizing a suitable halogen containing entity such as chlorine, bromine and iodine. This crystallographic etching yields in one embodiment essentially vertical surfaces of optical quality. Therefore, the procedure is useful in fabricating integrated circuits and in producing optical devices.

REFERENCES:
patent: 4354898 (1982-10-01), Coldren et al.
M. W. Geis et al., "A Novel Anisotropic Dry Etching Technique," Journal of Vaccum Science Technology, 19(4) 1390-1393, Nov./Dec. 1981.

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