Crystallizing a layer of silicon on a sodium thallium type cryst

Details Crystallizing a layer of silicon on a sodium thallium type cryst Crystallizing a layer of silicon on a sodium thallium type cryst

1976-11-01

1977-08-16

Emery, Stephen J.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156613, 156DIG64, 423348, 423350, 252501, 136 89SG, 427 58, B01J 1730, B01J 1732, C01B 3302

Patent

active

040424472

ABSTRACT:
Relates to a method for producing a product comprising crystalline silicon on a sodium thallium type substrate by application of silicon atoms gradually to that substrate whereby oriented overgrowth occurs and also to the product produced by said method. The product is useful in semiconductor and solar cell applications.

REFERENCES:
patent: 3325392 (1967-06-01), Rummel
patent: 3370980 (1968-02-01), Anderson
patent: 3382099 (1968-05-01), Montmory
patent: 3515576 (1970-06-01), Manaseirt
patent: 3658586 (1972-04-01), Wang
patent: 3990914 (1976-11-01), Weinstein
patent: 3993533 (1976-11-01), Milnes
Sze, Physics of Semiconductor Devices, John Wiley & Sons, 1969, pp. 11-17.
Bertoti, Journal of Materials Sci., May 1970, No. 12, pp. 1073-1077.
Hansen, Constitution of Binary Alloys 2nd Edi., McGraw-Hill, 1958, pp. 104-105, 423, 746, 905-907, 1265, 1268, 1270, 1271.

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