Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material forms active...
Patent
1991-09-24
1993-03-09
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material forms active...
136258, 136261, 257 53, 257447, 257460, 257458, 257461, H01L 2714
Patent
active
051929910
ABSTRACT:
A polycrystalline semiconductor device and a method of manufacturing the device are disclosed. An amorphous semiconductor film is deposited on a glass substrate and given thermal treatment at a crystallization temperature of 600.degree. C. or lower to form a polycrystalline photoconductive strucutre. The substrate is made from a material having the property of contracting at a percentage different than the semiconductor film by 10% or less, the contraction being caused by the thermal treatment.
REFERENCES:
patent: 5024706 (1991-06-01), Kanai et al.
patent: 5034333 (1991-07-01), Kim
patent: 5064477 (1991-01-01), Delahoy
Mintel William
Semiconductor Energy Laboratory Co,. Ltd.
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