Crystallization process and method of manufacturing thin film tr

Details Crystallization process and method of manufacturing thin film tr Crystallization process and method of manufacturing thin film tr

1995-07-07

1998-05-19

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438486, H01L 2100

Patent

active

057535442

ABSTRACT:
A crystallization process comprising the steps of depositing a polycrystalline silicon layer on a semiconductor substrate, implanting silicon ions into first and second areas of the polycrystalline silicon layer in different amounts such that crystals having a predetermined plane direction remain in the second area and such that the first area becomes amorphous, and performing a thermal treatment to recrystallize the amorphous second area using the crystals having the predetermined plane direction remaining in the first area as a nucleus.

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patent: 5457058 (1995-10-01), Yonehara
"High Performance Polysilicon Thin Flim Transistors". Mitra. U. et al. Mat. Res. Soc. Symp. Proc., vol. 182. pp. 381-386. 1990. Month not available.
"A Stacked-Cons Cell Technology for High-Density SRAM,s". Uemoto. Y. et al., IEEE Transactions On Electron Devices. vol. 39. No. 10. pp. 2359-2363. Oct 1992.
"High Reliability and High Performance 0.35 .mu.m Gate-Inverted TFT,s for 16Mbit SRAM Application Using Self-Aligned LDD Structures". Liu. C.T. et al., 92 IEDM. pp. 823-826. 1992. Month Not Available.

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