Crystallization method of silicon thin film, thin film...

Details Crystallization method of silicon thin film, thin film... Crystallization method of silicon thin film, thin film...

2005-03-08

2005-03-08

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C349S056000, C349S043000, C349S106000, C257S059000, C257S347000

Reexamination Certificate

active

06864130

ABSTRACT:
A crystallization method includes forming a black matrix layer that absorbs external light on an insulating substrate, wherein an upper region of the black matrix layer comprises a catalyst for silicon crystallization, patterning the black matrix layer, forming an amorphous silicon thin film on the insulating substrate and the black matrix layer, and thermally processing the amorphous silicon thin film for crystallization. A thin film transistor formed using the crystallization method has improved properties as a continuous metal-induced crystallization region and a metal-induced lateral crystallization region are formed therein without a definite boundary.

REFERENCES:
patent: 5827409 (1998-10-01), Iwata et al.
patent: 6274888 (2001-08-01), Suzuki et al.

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