Crystallization method and apparatus thereof

Details Crystallization method and apparatus thereof Crystallization method and apparatus thereof

2005-06-22

2009-06-30

Smith, Matthew (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S487000

Reexamination Certificate

active

07553715

ABSTRACT:
A method of crystallizing an amorphous silicon thin film on a substrate includes loading a substrate onto a stage, the substrate having an amorphous silicon thin film thereon and having first and second regions, performing a first crystallization by irradiating a laser beam on the first region of the amorphous silicon thin film, the first region being crystallized by moving the stage by a first distance, and performing a second crystallization by irradiating the laser beam on the second region, the second region being crystallized by moving the stage by a second distance.

REFERENCES:
patent: 6396560 (2002-05-01), Noguchi et al.
patent: 7164152 (2007-01-01), Im
patent: 2003/0164501 (2003-09-01), Suzuki et al.
patent: WO 2004/017381 (2004-02-01), None
Search Report dated Sep. 26, 2005.

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